IndiumV3, Russie, Analysis, bibRecord, 000338

Synchrotron X-ray topographic study of dislocations and stacking faults in InAs

Identifieur interne : 000338 ( Russie/Analysis ); précédent : 000337; suivant : 000339

Synchrotron X-ray topographic study of dislocations and stacking faults in InAs

Auteurs : RBID : Pascal:06-0018699

Descripteurs français

Pascal (Inist)
- Rayonnement synchrotron, Rayon X, Dislocation coin, Défaut empilement, Indium arséniure, Diffraction RX, Epitaxie phase vapeur, Structure dislocation, Vecteur Burgers, Film, Densité dislocation, Couche épitaxique, Inclusion, Défaut cristallin, Topographie RX, Composé minéral, InAs, In.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Burgers vector, Crystal defects, Dislocation density, Dislocation structure, Edge dislocations, Epitaxial layers, Films, Inclusions, Indium arsenides, Inorganic compounds, Stacking faults, Synchrotron radiation, VPE, X radiation, X-ray topography, XRD.

Abstract

X-ray diffraction topographs made with synchrotron radiation of an epitaxial InAs structure show images of dislocations and stacking faults. Three types of dislocations are identified and their Burgers vectors are determined from a number of topographs having different diffraction vectors and recorded on the same film at a time. Straight dislocations are found to be edge dislocations and their Burgers vector is (110). Also mixed dislocations are found. The overall dislocation density is about 2000cm^-2. Large stacking faults are limited by long straight dislocations, the Burgers vector of which is (110). Only a few threading dislocations are observed in the epitaxial layer grown by vapour-phase epitaxy. Their density is about 500cm^-2. Small circular dots found are interpreted as indium-rich inclusions.

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Links to Exploration step

Pascal:06-0018699

Le document en format XML

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<title level="j" type="abbreviated">J. cryst. growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Burgers vector</term>
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<term>Dislocation density</term>
<term>Dislocation structure</term>
<term>Edge dislocations</term>
<term>Epitaxial layers</term>
<term>Films</term>
<term>Inclusions</term>
<term>Indium arsenides</term>
<term>Inorganic compounds</term>
<term>Stacking faults</term>
<term>Synchrotron radiation</term>
<term>VPE</term>
<term>X radiation</term>
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<term>XRD</term>
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<term>Rayon X</term>
<term>Dislocation coin</term>
<term>Défaut empilement</term>
<term>Indium arséniure</term>
<term>Diffraction RX</term>
<term>Epitaxie phase vapeur</term>
<term>Structure dislocation</term>
<term>Vecteur Burgers</term>
<term>Film</term>
<term>Densité dislocation</term>
<term>Couche épitaxique</term>
<term>Inclusion</term>
<term>Défaut cristallin</term>
<term>Topographie RX</term>
<term>Composé minéral</term>
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<front><div type="abstract" xml:lang="en">X-ray diffraction topographs made with synchrotron radiation of an epitaxial InAs structure show images of dislocations and stacking faults. Three types of dislocations are identified and their Burgers vectors are determined from a number of topographs having different diffraction vectors and recorded on the same film at a time. Straight dislocations are found to be edge dislocations and their Burgers vector is (110). Also mixed dislocations are found. The overall dislocation density is about 2000cm<sup>-2</sup>
. Large stacking faults are limited by long straight dislocations, the Burgers vector of which is (110). Only a few threading dislocations are observed in the epitaxial layer grown by vapour-phase epitaxy. Their density is about 500cm<sup>-2</sup>
. Small circular dots found are interpreted as indium-rich inclusions.</div>
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<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Défaut cristallin</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Crystal defects</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Topographie RX</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>X-ray topography</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>20</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>20</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>51</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>In</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fN21><s1>002</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Synchrotron X-ray topographic study of dislocations and stacking faults in InAs
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Synchrotron X-ray topographic study of dislocations and stacking faults in InAs

Synchrotron X-ray topographic study of dislocations and stacking faults in InAs

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